Semiconductor Diode NEET MCQ

Welcome to Semiconductor Diode NEET MCQ, In this collection of multiple-choice questions (MCQs), each question is accompanied by both the correct answer and a detailed explanation. These MCQs are designed for NEET (National Eligibility-cum-Entrance Test) exam preparation, these MCQs will not only test your knowledge of semiconductor diodes but also provide you with comprehensive insights to deepen your understanding.

1. A semiconductor diode is formed by joining:

a) P-type and N-type semiconductors
b) Two N-type semiconductors
c) Two P-type semiconductors
d) Insulator and conductor

Answer:

a) P-type and N-type semiconductors

Explanation:

A semiconductor diode is essentially a p-n junction formed by joining a p-type and an n-type semiconductor.

2. In forward bias condition of a p-n diode:

a) The p-end is connected to the negative terminal of the battery
b) The n-end is connected to the negative terminal of the battery
c) Both ends are connected to the positive terminal
d) The diode is not connected to any battery

Answer:

b) The n-end is connected to the negative terminal of the battery

Explanation:

In the forward bias, the p-side is connected to the positive terminal and the n-side to the negative terminal of the battery.

3. Which of the following about a diode is true?

a) It allows current flow in both directions
b) It does not allow current to flow in any direction
c) It allows current to flow only from p to n
d) It allows current to flow only from n to p

Answer:

c) It allows current to flow only from p to n

Explanation:

A diode typically allows current to flow only in one direction, from the p-side to the n-side.

4. The depletion region in a diode is formed due to:

a) Movement of electrons
b) Movement of holes
c) Recombination of electrons and holes
d) Presence of impurity atoms

Answer:

c) Recombination of electrons and holes

Explanation:

The depletion region is formed due to the recombination of electrons from the n-side with holes from the p-side.

5. In reverse bias condition of a diode:

a) Minority charge carriers conduct current
b) Majority charge carriers conduct current
c) Both minority and majority carriers conduct current
d) No current flows through the diode

Answer:

a) Minority charge carriers conduct current

Explanation:

In the reverse bias condition, the majority carriers are pulled away from the junction, leaving the minority carriers to conduct a small current.

6. The ideal voltage across a silicon diode in forward bias for it to conduct is:

a) 0.7 V
b) 0.3 V
c) 1.1 V
d) 2.2 V

Answer:

a) 0.7 V

Explanation:

For a silicon diode, the threshold or cut-in voltage is approximately 0.7 V.

7. Zener diode is specially designed for:

a) Forward bias operation
b) Reverse bias operation
c) Amplification
d) Oscillation

Answer:

b) Reverse bias operation

Explanation:

Zener diodes are designed to operate in the reverse breakdown region.

8. Light Emitting Diodes (LED) emit light when:

a) Electrons recombine with holes
b) Voltage is applied across its terminals
c) Current flows through it in reverse direction
d) It is heated to a high temperature

Answer:

a) Electrons recombine with holes

Explanation:

LEDs emit light when electrons recombine with holes, releasing energy in the form of photons.

9. The material used for making solar cells is:

a) Germanium diode
b) Silicon diode
c) Zener diode
d) LED

Answer:

b) Silicon diode

Explanation:

Silicon diodes are commonly used in the construction of solar cells.

10. A diode's dynamic resistance is calculated in:

a) Forward bias
b) Reverse bias
c) Both forward and reverse bias
d) Neither forward nor reverse bias

Answer:

a) Forward bias

Explanation:

Dynamic resistance of a diode is calculated during its forward bias condition.

11. The barrier potential for germanium diode is approximately:

a) 0.03 V
b) 0.3 V
c) 0.7 V
d) 1.1 V

Answer:

b) 0.3 V

Explanation:

For a germanium diode, the barrier potential is approximately 0.3 V.

12. A photodiode is operated in:

a) Forward bias
b) Reverse bias
c) No bias
d) Both forward and reverse bias

Answer:

b) Reverse bias

Explanation:

Photodiodes are designed to operate in reverse bias.

13. The diode which can operate in reverse breakdown region without getting damaged is:

a) Ordinary diode
b) Zener diode
c) LED
d) Photodiode

Answer:

b) Zener diode

Explanation:

Zener diodes are specially designed to operate safely in the reverse breakdown region.

14. In a common diode, as the temperature rises:

a) Barrier potential decreases
b) Barrier potential increases
c) Current conduction decreases
d) Depletion layer becomes wider

Answer:

a) Barrier potential decreases

Explanation:

With increasing temperature, the barrier potential of a diode decreases.

15. Avalanche breakdown in a diode is due to:

a) High velocity of minority carriers
b) Sudden increase in reverse voltage
c) Impact ionization
d) Excessive forward current

Answer:

c) Impact ionization

Explanation:

Avalanche breakdown occurs due to impact ionization, where high kinetic energy carriers collide with bound electrons, releasing more carriers.

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